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IXFK33N50 - Power MOSFETs

Features

  • International Standard Packages.
  • Avalanche Rated.
  • Low Intrinsic Gate Resistance.
  • Low Package Inductance.
  • Fast Intrinsic Rectifier.
  • Molding epoxies meet UL 94 V-0 flammability classification.
  • Low RDS (on).

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HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated High dv/dt, Low trr IXFK33N50 IXFX35N50 VDSS 500V ID25 33A 35A RDS(on) 160m 150m TO-264 (IXFK) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 500 V 500 V  20 V  30 V TC = 25C 33N50 33 A 35N50 35 A TC = 25C, Pulse Width Limited by TJM 33N50 132 A 35N50 140 A TC = 25C TC = 25C 33 A 2.5 J IS  IDM, VDD  VDSS, TJ  150C TC = 25C 5 416 -55 ... +150 150 -55 ... +150 V/ns W C C C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s 300 °C 260 °C Mounting Torque (TO-264) Mounting Force (PLUS247) 1.13/10 20..
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