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IXFK360N15T2 - Power MOSFET

Key Features

  • International Standard Packages.
  • High Current Handling Capability.
  • Fast Intrinsic Diode.
  • Avalanche Rated.
  • Low RDS(on) Advantages.
  • Easy to Mount.
  • Space Savings.
  • High Power Density.

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IXFK360N10T Power MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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GigaMOSTM TrenchT2 HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFK360N15T2 IXFX360N15T2 VDSS = ID25 = RDS(on)  trr  150V 360A 4.0m 150ns TO-264 (IXFK) Symbol VDSS VDGR VGSS VGSM ID25 IL(RMS) IDM IA EAS PD dV/dt TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25C to 175C TJ = 25C to 175C, RGS = 1M Continuous Transient Maximum Ratings 150 V 150 V  20 V  30 V TC = 25C (Chip Capability) External Lead Current Limit TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  175°C 360 160 900 100 TBD 1670 20 -55 ... +175 175 -55 ... +175 A A A A J W V/ns C C C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.