Download the IXFK69N30P datasheet PDF.
This datasheet also covers the IXFH69N30P variant, as both devices belong to the same polarht hiperfet power mosfet family and are provided as variant models within a single manufacturer datasheet.
Key Features
z z
1.6 mm (0.062 in. ) from case for 10 s Mounting torque TO-247 TO-264
300
1.13/10 Nm/lb. in. 6 10 g g
z
z
International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic diode
Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 250µA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125°C
Characteristic Values Min. Typ. Max. 300 2.
Full PDF Text Transcription for IXFK69N30P (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
IXFK69N30P. For precise diagrams, and layout, please refer to the original PDF.
PolarHT HiPerFET Power MOSFET TM IXFH69N30P IXFK69N30P N-Channel Enhancement Mode Fast Intrinsic Diode RDS(on) trr VDSS ID25 = 300 V = 69 A = 49 mΩ ≤ 200 ns www.DataSheet...
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de RDS(on) trr VDSS ID25 = 300 V = 69 A = 49 mΩ ≤ 200 ns www.DataSheet4U.com Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 4 Ω TC = 25°C Maximum Ratings 300 300 ± 20 ± 30 69 200 69 50 1.5 10 500 -55 ... +150 150 -55 ... +150 V V V V A A A mJ J V/ns W °C °C °C °C TO-247 (IXFH) G D (TAB) D S TO-264 (IXFK) G D D (TAB) S D = Drain TAB = Drain G = Gate S = Source Features z z
IXFK69N30P Datasheet
