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HiPerFETTM Power MOSFETs
Q-Class
Single MOSFET Die
N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt
IXFN 21N100Q
Symbol
VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt
PD TJ TJM Tstg VISOL
M d
Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient
TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C
50/60 Hz, RMS t = 1 min
IISOL≤ 1 mA
t=1s
Mounting torque Terminal connection torque
Maximum Ratings
1000
V
1000
V
±20
V
±30
V
21
A
84
A
21
A
60
mJ
2.5
J
10
V/ns
520
-55 to +150 150
-55 to +150 2500 3000
1.5/13 1.5/13
30
W
°C °C °C V~ V~
Nm/lb.in. Nm/lb.in.
IXFN21N100Q Datasheet
