IXFN21N100Q Description
HiPerFETTM Power MOSFETs Q-Class Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt IXFN 21N100Q Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg VISOL M d Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; g Symbol VDSS VGS(th) IGSS IDSS RDS(on) Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min.
IXFN21N100Q Key Features
- IXYS advanced low Qg process -Low gate charge and capacitances
- easier to drive -faster switching
- Unclamped Inductive Switching (UIS)
- Low RDS (on) -Fast intrinsic diode
- International standard package
- miniBLOC with Aluminium nitride
- Low terminal inductance (<10 nH) and
- Molding epoxies meet UL 94 V-0