IXFN21N100Q
IXFN21N100Q is Power MOSFET manufactured by IXYS.
HiPerFETTM Power MOSFETs
Q-Class
Single MOSFET Die
N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt
IXFN 21N100Q
Symbol
VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt
PD TJ TJM Tstg VISOL
M d
Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient
TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C
50/60 Hz, RMS t = 1 min
IISOL≤ 1 mA t=1s
Mounting torque Terminal connection torque
Maximum Ratings
±20
±30
60 mJ
V/ns
-55 to +150 150
-55 to +150 2500 3000
1.5/13 1.5/13
°C °C °C...
