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IXFN21N100Q Datasheet Power MOSFET

Manufacturer: IXYS (now Littelfuse)

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Overview

HiPerFETTM Power MOSFETs Q-Class Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt IXFN 21N100Q Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg VISOL M d Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C 50/60 Hz, RMS t = 1 min IISOL≤ 1 mA t=1s Mounting torque Terminal connection torque Maximum Ratings 1000 V 1000 V ±20 V ±30 V 21 A 84 A 21 A 60 mJ 2.5 J 10 V/ns 520 -55 to +150 150 -55 to +150 2500 3000 1.5/13 1.5/13 30 W °C °C °C V~ V~ Nm/lb.in.

Nm/lb.in.

g Symbol VDSS VGS(th) IGSS IDSS RDS(on) Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min.

Key Features

  • IXYS advanced low Qg process.
  • Low gate charge and capacitances - easier to drive -faster switching.
  • Unclamped Inductive Switching (UIS) rated.
  • Low RDS (on).
  • Fast intrinsic diode.
  • International standard package.
  • miniBLOC with Aluminium nitride isolation for low thermal resistance.
  • Low terminal inductance (.

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