IXFN230N20T
IXFN230N20T is GigaMOS Power MOSFET manufactured by IXYS.
Advance Technical Information
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GigaMOSTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
RDS(on) ≤ ≤ trr
VDSS ID25
= =
200V 230A 7.5mΩ 200ns miniBLOC, SOT-227 E153432
Symbol VDSS VDGR VGSS VGSM ID25 IL(RMS) IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD VISOL Md Weight
Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Continuous Transient TC = 25°C External Lead Current Limit TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C TC = 25°C
Maximum Ratings 200 200 ±20 ±30 220 200 630 100 3 20 1090 -55 ... +175 175 -55 ... +175 V V V V A A A A J V/ns W °C °C °C °C °C V~ V~...
