Overview: Advance Technical Information
.. PolarHV HiPerFET Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
Preliminary Data Sheet TM IXFN 48N60P VDSS ID25
RDS(on) trr = 600 V = 48 A ≤ 135 mΩ ≤ 250 ns Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg Md Weight VISOL Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 4 Ω TC = 25°C Maximum Ratings 600 600 ± 30 ± 40 48 110 48 70 2.0 20 830 -55 ... +150 150 -55 ... +150 V V V V A A A mJ J V/ns W °C °C °C miniBLOC, SOT-227 B (IXFN) E153432
S G S D G = Gate S = Source D = Drain Either Source terminal S can be used as the Source terminal or the Kelvin Source (gate return) terminal.