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IXFN80N50Q3 Datasheet PDF

IXYS IXFN80N50Q3

Power MOSFET

Part No. IXFN80N50Q3
Datasheet IXFN80N50Q3 Download
Manufacturer
IXYS
Description Power MOSFET
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IXFN80N50Q3 datasheet page 1 preview

MAXIMUM RATINGS

500 V 500 V 30 V 40 V 63 A 240 A 80 A 5 J 50 780 -55 ... +150 150 -55 ... +150 2500 3000 1.5/13 1.3/11.5 30 V/ns W C C C V~ V~ Nm/lb.in. Nm/lb.in. g Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) BVDSS VGS = 0V, ID = 3mA VGS(th) VDS = VGS, ID = 8mA IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125C RDS(on) VGS = 10V, ID = 40A, Note 1 Characteristic Values Min. Typ. Max. 500 V 3.5 6.5 V 200 nA 50 A 2 mA 65 m VDSS = ID25 =  RDS(on) trr  500V 63A 65m 250ns miniBLOC E153432 S G S D G = Gate S = Source D = Drain Either Source Terminal S can be used as the Source Terminal or the Kelvin Source (Gate Return) Terminal.

FEATURES

● International Standard Package
● Low Intrinsic Gate Resistance
● miniBLOC with Aluminum Nitride Isolation
● Low Package Inductance
● Fast Intrinsic Rectifier
● Low RDS(on) and QG Advantages
● High Power Density
● Easy to Mount
● Space Savings

APPLICATIONS

● DC-DC Converters
● Battery Chargers
● S...
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