IXYS IXFN80N50Q3
Power MOSFET
MAXIMUM RATINGS
500 V 500 V 30 V 40 V 63 A 240 A 80 A 5 J 50 780 -55 ... +150 150 -55 ... +150 2500 3000 1.5/13 1.3/11.5 30 V/ns W C C C V~ V~ Nm/lb.in. Nm/lb.in. g Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) BVDSS VGS = 0V, ID = 3mA VGS(th) VDS = VGS, ID = 8mA IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125C RDS(on) VGS = 10V, ID = 40A, Note 1 Characteristic Values Min. Typ. Max. 500 V 3.5 6.5 V 200 nA 50 A 2 mA 65 m VDSS = ID25 = RDS(on) trr 500V 63A 65m 250ns miniBLOC E153432 S G S D G = Gate S = Source D = Drain Either Source Terminal S can be used as the Source Terminal or the Kelvin Source (Gate Return) Terminal.FEATURES
● International Standard Package● Low Intrinsic Gate Resistance
● miniBLOC with Aluminum Nitride Isolation
● Low Package Inductance
● Fast Intrinsic Rectifier
● Low RDS(on) and QG Advantages
● High Power Density
● Easy to Mount
● Space Savings
APPLICATIONS
● DC-DC Converters● Battery Chargers
● S...