Overview: Preliminary Technical Information Polar3TM HiperFETTM Power MOSFET IXFP20N50P3M VDSS = ID25 =
RDS(on) 500V 8A 300m N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier Symbol
VDSS VDGR
VGSS VGSM
ID25 IDM
IA EAS
dv/dt
PD
TJ TJM Tstg TL TSOLD
Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS IDM, VDD VDSS, TJ 150°C TC = 25C
Maximum Lead Temperature for Soldering Plastic Body for 10s Mounting Torque Maximum Ratings 500 500 V V 30 V 40 V 8A 40 A 10 A 300 mJ 35
58
-55 ... +150 150
-55 ... +150
300 260 V/ns
W
C C C
°C °C 1.13 / 10 2.5 Nm/lb.in g Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) BVDSS VGS = 0V, ID = 1mA VGS(th) VDS = VGS, ID = 1.5mA IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125C RDS(on) VGS = 10V, ID = 10A, Note 1 Characteristic Values Min. Typ. Max.
500 V
3.0 5.0 V
100 nA
25 A 1.
