IXFQ12N80P - Power MOSFET

Product Overview

IXYS

Part number	IXFQ12N80P
Manufacturer	IXYS
File Size	166.68 KB
Description	Power MOSFET
Datasheet	IXFQ12N80P Datasheet
Note	This datasheet PDF includes multiple part numbers: IXFQ12N80P, IXFH12N80P. Please refer to the document for exact specifications by model.
Additional preview pages of the IXFQ12N80P datasheet.

D (TAB) D = Drain TAB = Drain Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BV DSS V GS = 0 V, I D = 250 μA VGS(th) VDS = VGS, ID = 2.5 mA Characteristic Values Min. Typ. Max. 800 V 3.0 5.5 V z International standard packages z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect IGSS I DSS RDS(on) VGS = ±30 V, VDS = 0 V V =V DS DSS V =0V GS T J = 125°C VGS = 10 V, ID = 0.5 ID25 , Note 1 ±100 nA 25 μA Advanta.

📁 Similar Datasheet

IXFQ10N80P - Power MOSFET (IXYS Corporation)
IXFQ14N80P - PolarHV HiPerFET Power MOSFET (IXYS Corporation)
IXFQ22N60P3 - Polar3 HiperFET Power MOSFETs (IXYS Corporation)
IXFQ22N60P3 - Power MOSFET (IXYS Corporation)
IXFQ24N50P2 - Power MOSFET (IXYS Corporation)
IXFQ24N60X - N-Channel MOSFET (INCHANGE)
IXFQ26N60P - N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated (IXYS Corporation)
IXFQ28N60P3 - Polar3 HiperFET Power MOSFETs (IXYS Corporation)

Other Datasheets by IXYS

Published: Feb 18, 2016 |