IXFQ34N50P3 Datasheet | IXYS

Polar3TM HiperFETTM Power MOSFET IXFQ34N50P3 IXFH34N50P3 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier VDSS = ID25 = RDS(on)  500V 34A 180m TO-3P (IXFQ) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C TC = 25C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque TO-3P TO-247 Maximum Ratings  30  40 400 mJ V/ns -55 ... +150 150 -55 ......