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Polar3TM HiperFETTM Power MOSFET
IXFQ34N50P3 IXFH34N50P3
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier
VDSS = ID25 =
RDS(on)
500V 34A 180m
TO-3P (IXFQ)
Symbol
VDSS VDGR
VGSS VGSM
ID25 IDM
IA EAS
dv/dt
PD
TJ TJM Tstg TL TSOLD
Md Weight
Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS IDM, VDD VDSS, TJ 150°C TC = 25C
Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque TO-3P TO-247
Maximum Ratings
500
V
500
V
30
V
40
V
34
A
85
A
17
A
400
mJ
35
V/ns
695
W
-55 ... +150 150
-55 ... +150
C C C
300
°C
260
°C
1.13 / 10
5.5 6.0
Nm/lb.in.
IXFQ34N50P3 Datasheet
