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HiPerFETTM Power MOSFETs
N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family
IXFT10N100 IXFT12N100 IXFT13N100
V DSS
I
D25
1000 V 10 A
1000 V 12 A
1000 V 12.5 A
trr £ 250 ns
R DS(on)
1.20 W 1.05 W 0.90 W
Preliminary data sheet
Symbol V
DSS
VDGR V
GS
VGSM ID25
IDM
IAR
EAR dv/dt
P D
TJ T
JM
Tstg TL Md Weight
Symbol
VDSS VGS(th) IGSS IDSS
RDS(on)
Test Conditions
T J
= 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MW
Continuous Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W
T C
= 25°C
1.6 mm (0.062 in.) from case for 10 s Mounting torque
Maximum Ratings
10N100 12N100 13N100 10N100 12N100 13N100 10N100 12N100 13N100
1000 1000
±20 ±30
10 12 12.5 40 48 50 10 12 12.
IXFT10N100 Datasheet
