IXFT10N100
IXFT10N100 is manufactured by IXYS.
HiPerFETTM Power MOSFETs
N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family
IXFT10N100 IXFT12N100 IXFT13N100
V DSS
D25
1000 V 10 A
1000 V 12 A
1000 V 12.5 A trr £ 250 ns
R DS(on)
1.20 W 1.05 W 0.90 W
Preliminary data sheet
Symbol V
VDGR V
VGSM ID25
EAR dv/dt
TJ T
Tstg TL Md Weight
Symbol
VDSS VGS(th) IGSS IDSS
RDS(on)
Test Conditions
= 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MW
Continuous Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W
=...
