IXFT13N100 Description
+150 °C °C °C 300 °C 1.13/10 Nm/lb.in. TO-268 = 6 g Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min.
IXFT13N100 Key Features
- International standard package
- Low R HDMOSTM process
- Rugged polysilicon gate cell structure
- Unclamped Inductive Switching (UIS) rated
- Low package inductance
- easy to drive and to protect
- Fast intrinsic Rectifier