IXFT15N100 Datasheet | IXYS

.. Hi Per FETTM Power MOSFETs VDSS ID25 RDS(on) N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Preliminary data sheet IXFH/IXFT/IXFX14N100 1000 V 14 A 0.75 W IXFH/IXFT/IXFX15N100 1000 V 15 A 0.70 W trr £ 200 ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W TC = 25°C 14N100 15N100 14N100 15N100 14N100 15N100 Maximum Ratings 1000 1000 ±20 ±30 14 15 56 60 14 15 45 5 360 -55 ... +150 150 -55 ... +150 V V V V A A A A A A m J V/ns W °C °C °C °C Nm/lb.in. g TO-247 AD (IXFH) (TAB) PLUS 247TM (IXFX) (TAB) G D TO-268 (D3) (IXFT) G S (TAB) 1.6 mm (0.062 in.) from case for 10 s Mounting torque 300 1.13/10 6 Features q International standard packages q Low RDS (on) HDMOSTM process q Rugged polysilicon gate cell structure q Unclamped Inductive Switching (UIS) rated q Low package inductance - easy to drive and to protect q Fast intrinsic Rectifier Applications q DC-DC converters q Battery chargers q Switched-mode and resonant-mode power supplies q DC choppers q AC motor control q Temperature and lighting controls Advantages q Easy to mount with 1 screw (TO-247) (isolated mounting screw hole) or mounting clip or spring (PLUS 247TM) q High power surface mountable package q High power density 97535B (1/99) Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1000 2.5 4.5 ±100 TJ = 25°C TJ = 125°C 250 1 0.75 0.70 V V n A m A m A W W VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 1 m A VDS = VGS, ID = 4 m A VGS = ±20 VDC, VDS = 0 VDS = 0.8 - VDSS VGS = 0 V VGS = 10 V, ID = 0.5 - ID25 14N100 15N100 Pulse test, t £ 300 ms, duty cycle d £ 2...