IXFT15N100Q3 - Power MOSFET

IXYS (now Littelfuse)

Download the IXFT15N100Q3 datasheet PDF. This datasheet also covers the IXFH15N100Q3 variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

Low Intrinsic Gate Resistance.
International Standard Packages.
Low Package Inductance.
Fast Intrinsic Rectifier.
Low RDS(on) and QG Advantages.
High Power Density.
Easy to Mount.
Space Savings.

📥 Download Datasheet

IXFT15N100Q3 power mosfet by IXYS (now Littelfuse) - Datasheet Preview — Note: The manufacturer provides a single datasheet file (IXFH15N100Q3_IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	IXFT15N100Q3
Manufacturer	IXYS (now Littelfuse)
File Size	850.49 KB
Description	Power MOSFET
Datasheet	IXFT15N100Q3 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
IXFT15N100	HiPerFET Power MOSFETs	IXYS
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IXFT100N30X3HV	N-Channel Power MOSFET	IXYS
IXFT10N100	Power MOSFETs	IXYS
IXFT12N100	Power MOSFETs	IXYS

Other Datasheets by IXYS (now Littelfuse)

Part Number	Description
IXFT15N100Q	HiPerFET Power MOSFETs
IXFT15N80Q	HiPerFET Power MOSFETs
IXFT150N17T2	Power MOSFET
IXFT120N15P	Polar MOSFETs
IXFT12N100F	Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

Q3-Class HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFT15N100Q3 IXFH15N100Q3 D G S Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C TC = 25C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque (TO-247) TO-268 TO-247 Maximum Ratings 1000 V 1000 V  30 V  40 V 15 A 45 A 7.5 A 1.0 J 50 V/ns 690 W -55 ... +150 150 -55 ... +150  C  C  C 300 °C 260 °C 1.13 / 10 4.0 6.0 Nm/lb.in.