Overview: Q3-Class HiperFETTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFT15N100Q3 IXFH15N100Q3
D
G S Symbol
VDSS VDGR
VGSS VGSM ID25 IDM
IA EAS
dv/dt
PD
TJ TJM Tstg TL TSOLD
Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS IDM, VDD VDSS, TJ 150°C TC = 25C
Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque (TO-247) TO-268 TO-247 Maximum Ratings 1000 V 1000 V 30 V 40 V 15 A 45 A 7.5 A 1.0 J 50 V/ns 690 W -55 ... +150 150
-55 ... +150 C C C 300 °C 260 °C 1.13 / 10
4.0 6.0 Nm/lb.in.
g g Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) BVDSS VGS = 0V, ID = 1mA VGS(th) VDS = VGS, ID = 4mA IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125C RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 Characteristic Values Min. Typ. Max. 1000 V 3.5 6.5 V 100 nA 25 A 1.5 mA 1.05 VDSS = ID25 = RDS(on) trr 1000V 15A 1.
