IXFT150N17T2
IXFT150N17T2 is Power MOSFET manufactured by IXYS.
- Part of the IXFH150N17T2 comparator family.
- Part of the IXFH150N17T2 comparator family.
Advance Technical Information
Trench T2TM Hiper FETTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXFH150N17T2 IXFT150N17T2
VDSS ID25
RDS(on) trr
= = ≤ ≤
175V 150A 12.0mΩ 160ns
TO-247 (IXFH)
Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight
Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C TC = 25°C
Maximum Ratings 175 175 ± 20 ± 30 150 400 75 1.0 15 880 -55 ... +175 175 -55 ... +175 V V V V A A A J V/ns W °C °C °C °C °C Nm/lb.in. g g G = Gate S = Source D = Drain Tab = Drain G D S
D (Tab)
TO-268 (IXFT) G S
D (Tab)
Features z z
Maximum Lead Temperature for Soldering Plastic Body for 10s Mounting Torque (TO-247) TO-247 TO-268
300 260 1.13/10 6 4 z z z
High Current Handling Capability Fast Intrinsic Diode Dynamaic dv/dt Rated Avalanche Rated Low RDS(on)
Advantages z z
Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 250μA VDS = VGS, ID = 1m A VGS = ± 20V, VDS = 0V VDS = VDSS, VGS= 0V TJ = 150°C
Characteristic Values Min. Typ. Max. 175 2.5 4.5 ± 200 V V n A z
Easy to Mount Space Savings High Power Density
Applications z z z
10 μA 1.5 m A 9.7 12.0 mΩ z z z z
VGS = 10V, ID = 0.5
- ID25, Note 1
DC-DC Converters Battery Chargers Switch-Mode and Resonant-Mode Power Supplies DC Choppers AC Motor Drives Uninterruptible Power Supplies High Speed Power Switching Applications
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