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PolarHVTM HiPerFET Power MOSFETs
N-Channel Enhancement Mode Fast Intrinsic Diode; Avalanche Rated
Preliminary Data Sheet
IXFH 22N60P IXFT 22N60P
VDSS ID25
= = RDS(on) ≤ ≤ trr
600 V 22 A 330 mΩ 250 ns
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR E AS dv/dt PD TJ TJM Tstg TL Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Tranisent TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 4 Ω TC = 25°C
Maximum Ratings 600 600 ± 30 ± 40 22 66 22 40 1.0 10 400 -55 ... +150 150 -55 ... +150 V V V V A A A mJ J V/ns W °C °C °C °C °C
TO-247 (IXFT)
G
D
D (TAB) S
TO-268 (IXFT)
G
S
D (TAB)
G = Gate S = Source
D = Drain TAB = Drain
1.6 mm (0.062 in.
IXFT22N60P Datasheet
