IXFT22N60P Datasheet | IXYS

.. Polar HVTM Hi Per FET Power MOSFETs N-Channel Enhancement Mode Fast Intrinsic Diode; Avalanche Rated Preliminary Data Sheet IXFH 22N60P IXFT 22N60P VDSS ID25 = = RDS(on) ≤ ≤ trr 600 V 22 A 330 mΩ 250 ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR E AS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Tranisent TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 4 Ω TC = 25°C Maximum Ratings 600 600 ± 30 ± 40 22 66 22 40 1.0 10 400 -55 ... +150 150 -55 ... +150 V V V V A A A m J J V/ns W °C °C °C °C °C TO-247 (IXFT) D (TAB) S TO-268 (IXFT) D (TAB) G = Gate S = Source D = Drain TAB = Drain 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Mounting torque TO-247 TO-268 (TO-247) 300 250 1.13/10 Nm/lb.in. 6 5 g g Features z Fast intrinsic diode z Unclamped Inductive Switching (UIS) rated z International standard packages z Low package inductance - easy to drive and to protect Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 4 m A VGS = ±30 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125°C Characteristic Values Min. Typ. Max. 600 3.0 5.0 ±100 25 250 330 V V n A µA µA mΩ Advantages z Easy to mount z Space savings z High power density VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % © 2005 IXYS All rights reserved DS99315(02/05) IXFH 22N60P IXFT 22N60P .. Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. 15 21 3600 VGS = 0 V, VDS = 25 V, f = 1 MHz 305 38 20 VGS = 10 V, VDS = 0.5 VDSS, ID = ID25 RG = 4 Ω (External) 20 60 23 105 VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 25 55 0.31 (TO-247) 0.21 S p F p F p F ns ns ns ns n C n C n C K/W...