IXFT30N50
IXFT30N50 is Power MOSFET manufactured by IXYS.
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Hi Per FETTM Power MOSFETs
N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family
VDSS IXFH/IXFT 30N50 IXFH/IXFT 32N50 500 V 500 V
ID25 30 A 32 A
RDS(on) 0.16 W 0.15 W trr £ 250 ns
TO-247 AD (IXFH)
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAS EAR dv/dt PD TJ TJM Tstg TL Md Weight
Test Conditions T J = 25°C to 150°C T J = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C pulse width limited by TJM TC = 25°C TC = 25°C ID = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W TC = 25°C ±30 30N50 32N50 30N50 32N50 30N50 32N50
Maximum Ratings 500 500 ±20 V 30 32 120 128 30 32 1.5 45 5 360 -55 ... +150 150 -55 ... +150 V V V
D (TAB)
A A A A A A J m J V/ns W °C °C °C °C Nm/lb.in. g
TO-268 (D3) Case Style
G S G = Gate, S = Source,
(TAB)
D = Drain, TAB = Drain
Features
1.6 mm (0.062 in.) from case for 10 s Mounting torque
300 1.13/10 6
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Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 500 0.102 2 -0.206 ±100 TJ = 25°C TJ = 125°C 200 1 0.15 0.16 4 V %/K V %/K n A m A m A W W
International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated
- Low package inductance
- easy to drive and to protect
- Fast intrinsic Diode Applications
VDSS
VGS = 0 V, ID = 1 m A VDSS temperature coefficient VDS = VGS, ID = 4 m A VGS(th) temperature coefficient VGS = ±20 VDC, VDS = 0 VDS =...
