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IXFT50N60X Datasheet Power MOSFET

Manufacturer: IXYS (now Littelfuse)

Overview

X-Class HiPerFETTM Power MOSFET Preliminary Technical Information IXFT50N60X IXFQ50N60X IXFH50N60X VDSS = ID25 = RDS(on) 600V 50A 73m N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-268 (IXFT) G S D (Tab) TO-3P (IXFQ) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C TC = 25C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque (TO-247 & TO-3P) TO-268 TO-3P TO-247 Maximum Ratings 600 600 V V 30 V 40 V 50 A 120 A 20 A 2J 50 V/ns 660 W -55 ...

+150 150 -55 ...

+150 C C C 300 °C 260 °C 1.13 / 10 Nm/lb.in 4.0 g 5.5 g 6.0 g Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = 1mA VGS(th) VDS = VGS, ID = 4mA IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125C RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 Characteristic Values Min.

Key Features

  • International Standard Packages.
  • Low RDS(ON) and QG.
  • Avalanche Rated.
  • Low Package Inductance Advantages.
  • High Power Density.
  • Easy to Mount.
  • Space Savings.