IXFX170N20T
IXFX170N20T is GigaMOS Power MOSFET manufactured by IXYS.
- Part of the IXFK170N20T comparator family.
- Part of the IXFK170N20T comparator family.
Advance Technical Information
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GigaMOSTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXFK170N20T IXFX170N20T
RDS(on) ≤ ≤ trr
TO-264 (IXFK)
VDSS ID25
= =
200V 170A 11mΩ 200ns
Symbol VDSS VDGR VGSS VGSM ID25 IL(RMS) IDM IA EAS PD dV/dt TJ TJM Tstg TL TSOLD Md FC Weight
Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Continuous Transient TC = 25°C External Lead Current Limit TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C
Maximum Ratings 200 200 ± 20 ± 30 170 160 470 40 3 1150 20 -55 ... +175 175 -55 ... +175 V V V V A A A A J W V/ns °C °C °C °C °C Nm/lb.in....
