IXFX240N15T2 - GigaMOS TrenchT2 HiperFET Power MOSFET

IXYS (now Littelfuse)

Key Features

z International Standard Packages z High Current Handling Capability z Fast Intrinsic Diode z Avalanche Rated z Low RDS(on) Advantages z Easy to Mount z Space Savings z High Power Density.

IXFX240N15T2 gigamos trencht2 hiperfet power mosfet by IXYS (now Littelfuse) - Datasheet Preview

Datasheet Details

Part number	IXFX240N15T2
Manufacturer	IXYS (now Littelfuse)
File Size	205.22 KB
Description	GigaMOS TrenchT2 HiperFET Power MOSFET
Datasheet	IXFX240N15T2 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Advance Technical Information www.DataSheet4U.com GigaMOSTM TrenchT2 HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFK240N15T2 IXFX240N15T2 VDSS = ID25 = RDS(on) ≤ trr ≤ 150V 240A 5.2mΩ 140ns TO-264 (IXFK) Symbol VDSS VDGR VGSS VGSM ID25 IL(RMS) IDM IA EAS PD dV/dt TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Continuous Transient TC = 25°C (Chip Capability) External Lead Current Limit TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C 1.6mm (0.062 in.