Overview: HiPerFETTM Power MOSFETs
N-Channel Enhancement Mode Avalanche Rated High dv/dt, Low trr IXFK33N50 IXFX35N50 VDSS
500V ID25
33A
35A RDS(on) 160m
150m TO-264 (IXFK) Symbol VDSS VDGR VGSS VGSM ID25
IDM
IA EAS
dv/dt
PD TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions
TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M
Continuous Transient Maximum Ratings 500 V 500 V 20 V 30 V TC = 25C 33N50 33 A 35N50 35 A TC = 25C, Pulse Width Limited by TJM 33N50 132 A 35N50 140 A TC = 25C TC = 25C 33 A 2.5 J IS IDM, VDD VDSS, TJ 150C TC = 25C 5
416
-55 ... +150 150
-55 ... +150 V/ns
W
C C C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s 300 °C 260 °C Mounting Torque (TO-264) Mounting Force (PLUS247) 1.13/10 20..120 /4.5..27 Nm/lb.in N/lb TO-264 PLUS247 10 g 6 g Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 1mA VDSS Temperature Coefficient 500 V 0.102 %/K VGS(th) VDS = VGS, ID = 4mA VGS(th) Temperature Coefficient 2.0 4.5 V -0.206 %/K IGSS VGS = 20V, VDS = 0V 200 nA IDSS VDS = 0.8 • VDSS, VGS = 0V TJ = 125C 200 A 2 mA RDS(on) VGS = 10V, ID = 0.
