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IXFX35N50 - Power MOSFETs

Download the IXFX35N50 datasheet PDF. This datasheet also covers the IXFK33N50 variant, as both devices belong to the same power mosfets family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • International Standard Packages.
  • Avalanche Rated.
  • Low Intrinsic Gate Resistance.
  • Low Package Inductance.
  • Fast Intrinsic Rectifier.
  • Molding epoxies meet UL 94 V-0 flammability classification.
  • Low RDS (on).

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXFK33N50-IXYS.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated High dv/dt, Low trr IXFK33N50 IXFX35N50 VDSS 500V ID25 33A 35A RDS(on) 160m 150m TO-264 (IXFK) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 500 V 500 V  20 V  30 V TC = 25C 33N50 33 A 35N50 35 A TC = 25C, Pulse Width Limited by TJM 33N50 132 A 35N50 140 A TC = 25C TC = 25C 33 A 2.5 J IS  IDM, VDD  VDSS, TJ  150C TC = 25C 5 416 -55 ... +150 150 -55 ... +150 V/ns W C C C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s 300 °C 260 °C Mounting Torque (TO-264) Mounting Force (PLUS247) 1.13/10 20..