IXFX48N55 Overview
+150 °C °C °C 300 °C 0.9/6 Nm/lb.in. 550 V 2.5 4.5 V ±200 nA TJ = 125°C 100 mA 2 mA 110 mW PLUS 247TM (IXFK) G (TAB) D TO-264 AA (IXFK) G D S (TAB) G = Gate S = Source D = Drain TAB = Drain.
IXFX48N55 Key Features
- Internationalstandardpackages
- Low R HDMOSTM process
- Rugged polysilicon gate cell structure
- Unclamped Inductive Switching (UIS)
- Low package inductance
- easy to drive and to protect
- Fast intrinsic rectifier