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IXFX48N55 - Power MOSFET

Download the IXFX48N55 datasheet PDF. This datasheet also covers the IXFK48N55 variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Internationalstandardpackages.
  • Low R.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXFK48N55-IXYS.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IXFX48N60P Power MOSFET IXYS Corporation
IXFX40N90P Power MOSFET IXYS Corporation
IXFX420N10T N-Channel MOSFET INCHANGE
IXFX44N50Q Power MOSFET ETC
IXFX44N60 Power MOSFET IXYS Corporation

Other Datasheets by IXYS (now Littelfuse)

Part Number Description
IXFX48N60Q3 Power MOSFET
IXFX420N10T Power MOSFET
IXFX44N50F Power MOSFET
IXFX44N55Q Power MOSFET
IXFX44N80Q3 N-Channel Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HiPerFETTM Power MOSFETs Single MOSFET Die Avalanche Rated IXFK 48N55 IXFX 48N55 VDSS = 550 V ID25 = 48 A =RDS(on) 110 mW trr £ 250 ns Preliminary data Symbol VDSS V DGR VGS V GSM I D25 IDM I AR EAR E AS dv/dt PD TJ TJM Tstg TL M d Weight Symbol VDSS VGS(th) IGSS IDSS RDS(on) Test Conditions TJ = 25°C to 150°C T J = 25°C to 150°C; R GS = 1 MW Continuous Transient T C = 25°C TC = 25°C, pulse width limited by TJM T C = 25°C TC = 25°C T C = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS TJ £ 150°C, RG = 2 W TC = 25°C 1.6 mm (0.063 in.) from case for 10 s Mounting torque TO-264 PLUS 247 TO-264 Maximum Ratings 550 V 550 V ±20 V ±30 V 48 A 192 A 44 A 60 mJ 3J 5 V/ns 560 W -55 ... +150 150 -55 ... +150 °C °C °C 300 °C 0.9/6 Nm/lb.in.