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IXGA15N120B2 - IGBT

Key Features

  • International standard packages JEDEC TO-220AB and TO-263AA.
  • Low switching losses.
  • MOS Gate turn-on - drive simplicity Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BV CES VGE(th) I C = 250 µA, V GE = 0 V IC = 250 µA, VCE = VGE ICES VCE = VCES V =0V GE I GES V CE = 0 V, V GE = ±20 V VCE(sat) IC = ICE90, VGE = 15 Characteristic Values Min. Typ. Max. 1200 2.5 V 5.0 V TJ = 25°C T J = 125°C 100 µA 3.5 mA ±100 nA TJ = 125.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HiPerFASTTM IGBT IXGA 15N120B2 IXGP 15N120B2 Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching VCES IC25 VCE(sat) tfi(typ) =1200 V = 30 A = 3.5 V = 137 ns Symbol Test Conditions VCES VCGR VGES VGEM IC25 IC90 I CM SSOA (RBSOA) TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 90°C T C = 25°C, 1 ms V GE = 15 V, T VJ = 125°C, R G = 10 Ω Clamped inductive load PC TC = 25°C TJ TJM Tstg Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md Weight Mounting torque with screw M3 Mounting torque with screw M3.5 TO-220 TO-263 Maximum Ratings 1200 1200 ±20 ±30 30 15 60 I = 40 CM @ 0.8 V CES 170 -55 ... +150 150 -55 ...