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GenX3TM 600V IGBTs w/ SiC Anti-Parallel Diode
High-Speed PT IGBTs for 40 - 100kHz Switching
IXGA30N60C3C1* IXGP30N60C3C1
IXGH30N60C3C1
*Obsolete Part Number
Symbol Test Conditions
VCES VCGR
VGES VGEM
TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ
Continuous Transient
IC25 IC110 IF110 ICM
SSOA
(RBSOA)
TC = 25°C TC = 110°C TC = 110°C TC = 25°C, 1ms
VGE = 15V, TVJ = 125°C, RG = 5Ω
Clamped Inductive Load
PC
TJ TJM Tstg
TL TSOLD Md Weight
TC = 25°C
1.6mm (0.062 in.) from Case for 10s Plastic Body for 10 seconds Mounting Torque (TO-220 & TO-247) TO-263 TO-220 TO-247
Maximum Ratings
600
V
600
V
± 20
V
± 30
V
60
A
30
A
13
A
150
A
ICM = 60
A
@ ≤ VCES
220
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300 260
1.13/10
2.5 3.0 6.0
°C °C
Nm/lb.in.
IXGA30N60C3C1 Datasheet
