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IXGH12N100

Manufacturer: IXYS (now Littelfuse)

IXGH12N100 datasheet by IXYS (now Littelfuse).

IXGH12N100 datasheet preview

IXGH12N100 Datasheet Details

Part number IXGH12N100
Datasheet IXGH12N100-IXYS.pdf
File Size 100.30 KB
Manufacturer IXYS (now Littelfuse)
Description High Speed IGBT
IXGH12N100 page 2 IXGH12N100 page 3

IXGH12N100 Overview

+150 °C 1.13/10 Nm/lb.in. 6 g 300 °C Symbol BVCES VGE(th) ICES IGES VCE(sat) Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min.

IXGH12N100 Key Features

  • International standard package
  • 2nd generation HDMOSTM process
  • Low VCE(sat)
  • for low on-state conduction losses
  • High current handling capability
  • MOS Gate turn-on
  • drive simplicity
  • Voltage rating guaranteed at high

IXGH12N100AU1 from other manufacturers

View IXGH12N100AU1 datasheet index

Brand Logo Part Number Description Other Manufacturers
IXYS Corporation Logo IXGH12N100AU1 IGBT IXYS Corporation
IXYS Corporation Logo IXGH12N100U1 IGBT IXYS Corporation
IXYS (now Littelfuse) logo - Manufacturer

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IXGH12N100 Distributor

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