IXGH12N100 Description
+150 °C 1.13/10 Nm/lb.in. 6 g 300 °C Symbol BVCES VGE(th) ICES IGES VCE(sat) Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min.
IXGH12N100 Key Features
- International standard package
- 2nd generation HDMOSTM process
- Low VCE(sat)
- for low on-state conduction losses
- High current handling capability
- MOS Gate turn-on
- drive simplicity
- Voltage rating guaranteed at high