Overview: Low VCE(sat) IGBT High Speed IGBT IXGH 12N100 IXGH 12N100A VCES
1000 V 1000 V I V C25 CE(sat) 24 A 3.5 V 24 A 4.0 V Symbol Test Conditions VCES VCGR
VGES V
GEM
IC25 IC90 ICM
SSOA (RBSOA) TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient
TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE= 15 V, TVJ = 125°C, RG = 150 W Clamped inductive load, L = 300 mH PC T
J
TJM Tstg Md Weight TC = 25°C Mounting torque (M3) Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum Ratings 1000 V 1000 V ±20 V ±30 V 24 A 12 A 48 A ICM = 24 A @ 0.8 VCES 100 W -55 ... +150 °C 150 °C -55 ... +150 °C 1.13/10 Nm/lb.in. 6 g 300 °C Symbol
BVCES VGE(th) ICES IGES VCE(sat) Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max. IC = 3 mA, VGE = 0 V BVCES temperature coefficient 1000 V 0.072 %/K IC = 500 mA, VGE = VGE VGE(th) temperature coefficient 2.5 5.5 V -0.192 %/K VCE = 0.8 VCES VGE = 0 V TJ = 25°C TJ = 125°C 250 mA 1 mA VCE = 0 V, VGE = ±20 V ±100 nA IC = IC90, VGE = 15 V 12N100 12N100A 3.5 V 4.
