IXYS IXGH25N100A
High speed IGBT
| Part No. | IXGH25N100A |
|---|---|
| Datasheet | IXGH25N100A Download |
| Manufacturer |  IXYS |
| Description | High speed IGBT |
| Buy | Stock & Price |
MAXIMUM RATINGS
1000 1000 ±20 ±30 50 25 100 ICM = 50 @ 0.8 VCES 200 -55 ... +150 150 -55 ... +150 V V V V A A A A W °C °C °C TO-247 AD (IXGH) V CES V CGR V GES V GEM I C25 I C90 I CM SSOA (RBSOA) PC TJ TJM Tstg Md Weight G C E TO-204 AE (IXGM) C G = Gate, E = Emitter, C = Collector, TAB = Collector Mounting torque (M3) 1.13/10 Nm/lb.in. TO-204 = 18 g, TO-247 = 6 g 300 °C Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Symbol Test Conditions Characteristic Values (TJ = 25° C, unless otherwise specified) min. typ. max. 1000 2.5 TJ = 25°C TJ = 125°C 5 250 1 ±100 25N100 25N100A 3.5 4.0 V V µA mA nA V VFEATURES
International standard packages 2nd generation HDMOSTM process Low VCE(sat) - for low on-state conduction losses High current handling capability MOS Gate turn-on - drive simplicity Voltage rating guaranteed at high temperature (125°C) l l l l l l BVCES VGE(th) I CES I GES VCE(sat) IC IC = 3 mA, VGE = 0 V = 250 µA, VCE = VGE V CE = 0.8● VCES V GE = 0 V...
