IXYS IXGH30N60
the IXGH 30N60U1 and IXGH 30N60AU1 data sheets.| Part No. | IXGH30N60 |
|---|---|
| Datasheet | IXGH30N60 Download |
| Manufacturer |  IXYS |
| Description | Low VCE(sat) IGBT |
| Buy | Stock & Price |
MAXIMUM RATINGS
600 600 ±20 ±30 50 30 100 ICM = 60 @ 0.8 VCES 200 -55 ... +150 150 -55 ... +150 V V V V A A A A W °C °C °C TO-247 AD (IXGH) VCES VCGR VGES VGEM I C25 I C90 I CM SSOA (RBSOA) PC TJ TJM Tstg Md Weight G C E TO-204 AE (IXGM) C G = Gate, E = Emitter, C = Collector, TAB = Collector Mounting torque (M3) 1.13/10 Nm/lb.in. TO-204 = 18 g, TO-247 = 6 g 300 °C Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 600 2.5 TJ = 25°C TJ = 125°C 5 200 1 ±100 30N60 30N60A 2.5 3.0 V V µA mA nA V VFEATURES
International standard packages 2nd generation HDMOSTM process Low VCE(sat) - for low on-state conduction losses High current handling capability MOS Gate turn-on - drive simplicity Voltage rating guaranteed at high temperature (125°C) l l l l l l BVCES VGE(th) ICES I GES VCE(sat) IC IC = 250 µA, VGE = 0 V = 250 µA, VCE = VGE VCE = 0.8● VCES VGE = 0 V VCE = 0 V,...
