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IXGH30N60B2D1 - IGBT

Key Features

  • z Medium frequency IGBT z Square RBSOA z High current handling capability z MOS Gate turn-on - drive simplicity.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Advance Technical Data HiPerFASTTM IGBT Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching IXGH 30N60B2D1 IXGT 30N60B2D1 VCES IC25 VCE(sat) tfi typ = 600 V = 70 A < 1.8 V = 82 ns Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ VGES VGEM Continuous Transient IC25 TC = 25°C (limited by leads) IC110 TC = 110°C ICM TC = 25°C, 1 ms SSOA (RBSOA) PC VGE = 15 V, TVJ = 125°C, RG = 10 Ω Clamped inductive load @ ≤ 600 V TC = 25°C TJ TJM Tstg Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md Weight Mounting torque (M3) (TO-247) TO-247 TO-268 Maximum Ratings 600 V 600 V ±20 V ±30 V 70 A 30 A 150 A ICM = 60 A 190 -55 ... +150 150 -55 ... +150 300 W °C °C °C °C 1.13/10Nm/lb.in.