IXYS IXGH30N60B2D1
IGBT
| Part No. | IXGH30N60B2D1 |
|---|---|
| Datasheet | IXGH30N60B2D1 Download |
| Manufacturer |  IXYS |
| Description | IGBT |
| Buy | Stock & Price |
MAXIMUM RATINGS
600 V 600 V ±20 V ±30 V 70 A 30 A 150 A ICM = 60 A 190 -55 ... +150 150 -55 ... +150 300 W °C °C °C °C 1.13/10Nm/lb.in. 6g 4g Symbol Test Conditions VGE(th) ICES IGES VCE(sat) IC = 250 µA, VCE = VGE VCE = VCES VGE = 0 V VCE = 0 V, VGE = ±20 V IC = 24 A, VGE = 15 V Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 2.5 5.0 V TJ = 25°C TJ = 150°C TJ = 25°C 200 µA 3 mA ±100 nA 1.8 V TO-247 AD (IXGH) G CE TO-268 (IXGT) C (TAB) G E C (TAB) G = Gate, E = Emitter, C = Collector, TAB = CollectorFEATURES
z Medium frequency IGBT z Square RBSOA z High current handling capability z MOS Gate turn-on - drive simplicityAPPLICATIONS
z PFC circuits z Uninterruptible power supplies (UPS) z Switched-mode and resonant-mode power supplies z AC motor speed control z DC servo and robot drives z DC choppers © 2004 IXYS All rights reserved DS99134A(04/04) Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs Cies Coes...
