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IXGH30N60C2D1 - HiPerFAST IGBT

Key Features

  • z z z z 1.13/10Nm/lb. in. 6 4 Very high frequency IGBT Square RBSOA High current handling capability MOS Gate turn-on - drive simplicity Symbol Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 2.5 TJ = 25°C TJ = 125°C 5.0 200 3 ±100 TJ = 25°C TJ = 125°C 2.7 1.8 V µA mA nA V V.

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Other Datasheets by IXYS (now Littelfuse)

Part Number Description
IXGH30N60C2 HiPerFAST IGBT
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com HiPerFAST with Diode TM IGBT C2-Class High Speed IGBTs IXGH 30N60C2D1 VCES IXGT 30N60C2D1 IC25 VCE(sat) tfi typ = 600 V = 70 A = 2.7 V = 32 ns Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C (limited by leads) TC = 110°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 10 Ω Clamped inductive load @ ≤ 600 V TC = 25°C Maximum Ratings 600 600 ±20 ±30 70 30 150 ICM = 60 190 -55 ... +150 150 -55 ... +150 300 250 V V V V A A A A W °C °C °C °C °C g g TO-247 AD (IXGH) C (TAB) G C E TO-268 (IXGT) G E C (TAB) G = Gate, E = Emitter, C = Collector, TAB = Collector Maximum lead temperature for soldering 1.6 mm (0.062 in.