IXGH30N60C2D1
IXGH30N60C2D1 is HiPerFAST IGBT manufactured by IXYS.
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HiPerFAST with Diode
IGBT
C2-Class High Speed IGBTs
IXGH 30N60C2D1 VCES IXGT 30N60C2D1 IC25 VCE(sat) tfi typ
= 600 V = 70 A = 2.7 V = 32 ns
Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C (limited by leads) TC = 110°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 10 Ω Clamped inductive load @ ≤ 600 V TC = 25°C
Maximum Ratings 600 600 ±20 ±30 70 30 150 ICM = 60 190 -55 ... +150 150 -55 ... +150 300 250 V V V V A A A A W °C °C °C °C °C g g
TO-247 AD (IXGH)
C (TAB) G C E
TO-268 (IXGT)
C (TAB)
G = Gate, E = Emitter,
C = Collector,...
