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IXGH36N60B3C1 - GenX3 600V IGBT

Features

  • z z z z Optimized for Low Conduction and Switching Losses Square RBSOA Anti-Parallel Schottky Diode International Standard Package Advantages z z 1.6mm (0.062 in. ) from Case for 10 seconds Plastic Body for 10 seconds Mounting Torque 300 260 1.13/10 6 High Power Density Low Gate Drive Requirement Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) VGE(th) ICES IGES VCE(sat) IC = 250μA, VCE = VGE VCE = VCES, VGE = 0V TJ =125°C VCE = 0V, VGE = ± 20V IC = 30A, VGE = 15V, Note 1 Cha.

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Datasheet Details

Part number IXGH36N60B3C1
Manufacturer IXYS
File Size 204.43 KB
Description GenX3 600V IGBT
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Preliminary Technical Information www.DataSheet4U.com GenX3TM 600V IGBT w/ SiC Anti-Parallel Diode Medium Speed Low Vsat PT IGBT for 5 - 40kHz Switching IXGH36N60B3C1 VCES IC110 VCE(sat) tfi(typ) TO-247 = = ≤ = 600V 36A 1.8V 100ns Symbol VCES VCGR VGES VGEM IC25 IC110 IF110 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C (Limited by Leads) TC = 110°C TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 125°C, RG = 5Ω Clamped Inductive Load TC = 25°C Maximum Ratings 600 600 ± 20 ± 30 75 36 20 200 ICM = 80 @ ≤ VCES 250 -55 ... +150 150 -55 ... +150 V V V V A A A A A W °C °C °C °C °C Nm/lb.in.
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