IXGH36N60B3D1 Description
+150 °C 300 °C 260 °C 1.13/10 Nm/lb.in. 600 V 3.0 5.0 V TJ =125°C 300 μA 1.75 mA ±100 nA 1.5 1.8 V G CE (TAB) G = Gate E = Emitter C = Collector TAB = Collector.
- Part: IXGH36N60B3D1
- Manufacturer: IXYS
- Size: 181.20 KB
Related IXYS Datasheets
| Part Number | Description |
|---|---|
| IXGH36N60B3 | Medium-Speed Low-Vsat PT IGBT |
| IXGH36N60B3C1 | GenX3 600V IGBT |
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| IXGH30N60C2D1 | HiPerFAST IGBT |