IXGH36N60B3D1 Overview
+150 °C 300 °C 260 °C 1.13/10 Nm/lb.in. 600 V 3.0 5.0 V TJ =125°C 300 μA 1.75 mA ±100 nA 1.5 1.8 V G CE (TAB) G = Gate E = Emitter C = Collector TAB = Collector.
| Part number | IXGH36N60B3D1 |
|---|---|
| Datasheet | IXGH36N60B3D1-IXYS.pdf |
| File Size | 181.20 KB |
| Manufacturer | IXYS (now Littelfuse) |
| Description | Medium-Speed Low-Vsat PT IGBT |
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+150 °C 300 °C 260 °C 1.13/10 Nm/lb.in. 600 V 3.0 5.0 V TJ =125°C 300 μA 1.75 mA ±100 nA 1.5 1.8 V G CE (TAB) G = Gate E = Emitter C = Collector TAB = Collector.
See all IXYS (now Littelfuse) datasheets
| Part Number | Description |
|---|---|
| IXGH36N60B3 | Medium-Speed Low-Vsat PT IGBT |
| IXGH36N60B3C1 | GenX3 600V IGBT |
| IXGH30N60B2D1 | IGBT |
| IXGH30N60C2 | HiPerFAST IGBT |
| IXGH30N60C2D1 | HiPerFAST IGBT |
| IXGH30N60C3C1 | High-Speed PT IGBT |
| IXGH32N120A3 | Ultra-Low Vsat PT IGBT |
| IXGH32N170A | High Voltage IGBT |
| IXGH32N90B2 | High Speed IGBTs |
| IXGH32N90B2D1 | IGBT |