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Preliminary Technical Information
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GenX3TM 600V IGBT w/ SiC Anti-Parallel Diode
IXGH48N60B3C1
VCES IC110 VCE(sat) tfi(typ)
= = ≤ =
600V 48A 1.8V 116ns
Medium Speed Low Vsat PT IGBT 5 - 40 kHz Switching
TO-247
Symbol VCES VCGR VGES VGEM IC25 IC110 IF110 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md Weight
Test Conditions TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C (Limited by Leads) TC = 110°C TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 125°C, RG = 5Ω Clamped Inductive Load TC = 25°C
Maximum Ratings 600 600 ± 20 ± 30 75 48 20 280 ICM = 120 @ ≤ VCES 300 -55 ... +150 150 -55 ... +150 W °C °C °C °C °C Nm/lb.in.
IXGH48N60B3C1 Datasheet
