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IXGH48N60B3D1 - Medium speed low Vsat PT IGBT

Key Features

  • z Optimized for low conduction and switching losses z Square RBSOA z Anti-parallel ultra fast diode z International standard package Advantages z High power density z Low gate drive requirement.

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Full PDF Text Transcription for IXGH48N60B3D1 (Reference)

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Preliminary Technical Information GenX3TM 600V IGBT with Diode Medium speed low Vsat PT IGBTs 5-40 kHz switching IXGH48N60B3D1 VCES = IC110 = VCE(sat) ≤ 600V 48A 1.8V Sym...

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Hz switching IXGH48N60B3D1 VCES = IC110 = VCE(sat) ≤ 600V 48A 1.8V Symbol VCES VCGR VGES VGEM IC110 ID110 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 110°C TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 125°C, RG = 5Ω Clamped inductive load @ ≤ 600V TC = 25°C 1.6mm (0.062 in.

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