IXGH48N60B3D1 - Medium speed low Vsat PT IGBT

Features

z Optimized for low conduction and switching losses z Square RBSOA z Anti-parallel ultra fast diode z International standard package Advantages z High power density z Low gate drive requirement.

IXYS

Datasheet Details

Part number	IXGH48N60B3D1
Manufacturer	IXYS
File Size	208.60 KB
Description	Medium speed low Vsat PT IGBT
Datasheet	IXGH48N60B3D1 Datasheet
Additional preview pages of the IXGH48N60B3D1 datasheet.

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Full PDF Text Transcription

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Preliminary Technical Information GenX3TM 600V IGBT with Diode Medium speed low Vsat PT IGBTs 5-40 kHz switching IXGH48N60B3D1 VCES = IC110 = VCE(sat) ≤ 600V 48A 1.8V Symbol VCES VCGR VGES VGEM IC110 ID110 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 110°C TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 125°C, RG = 5Ω Clamped inductive load @ ≤ 600V TC = 25°C 1.6mm (0.062 in.

Published: Feb 10, 2025 |