IXYS IXGH60N60C3
High Speed PT IGBT
| Part No. | IXGH60N60C3 |
|---|---|
| Datasheet | IXGH60N60C3 Download |
| Manufacturer |  IXYS |
| Description | High Speed PT IGBT |
| Buy | Stock & Price |
MAXIMUM RATINGS
600 600 ±20 ±30 75 60 360 40 400 ICM = 125 VCE ≤ VCES 380 -55 ... +150 150 -55 ... +150 300 260 1.13/10 6 V V V V A A A A mJ A W °C °C °C °C °C Nm/lb.in. gFEATURES
z z z z G C E Tab G = Gate E = Emitter C = Collector Tab = Collector Optimized for Low Switching Losses Square RBSOA Avalanche rated International Standard Package Advantages z z High Power Density Low Gate Drive RequirementAPPLICATIONS
z Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVCES VGE(th) ICES IGES VCE(sat) IC IC = 250μA, VGE = 0V = 250μA, VCE = VGE TJ = 125°C Characteristic Values Min. Typ. Max. 600 3.0 5.5 V V 50 μA 1 mA ±100 TJ = 125°C 2.2 1.7 2.5 nA V V z z z z z z z VCE = VCES, VGE= 0V VCE = 0V, VGE = ±20V IC = 40A, VGE = 15V High Frequency Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts © 2010 IXYS CORPORATION, All Rights Reserved DS99928B(01/10) IXGH60N60C3 Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) gfs C...
