IXGR72N60C3 Datasheet PDF (High-Speed Low-Vsat PT IGBT)

IXGR72N60C3 - High-Speed Low-Vsat PT IGBT

Features

mJ A.
Silicon Chip on Direct-Copper Bond (DCB) Substrate.
Optimized for Low Switching Losses W.
Square RBSOA.
Isolated Mounting Surface C.
Avalanche Rated C.
2500V Electrical Isolation C °C Advantages °C V~.
High Power Density.
Low Gate Drive Requirement N/lb g.

Datasheet Details

Part number	IXGR72N60C3
Manufacturer	IXYS (now Littelfuse)
File Size	892.25 KB
Description	High-Speed Low-Vsat PT IGBT
Datasheet	IXGR72N60C3 Datasheet
Additional preview pages of the IXGR72N60C3 datasheet.

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Full PDF Text Transcription

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Preliminary Technical Information GenX3TM 600V IGBT (Electrically Isolated Tab) High-Speed Low-Vsat PT IGBT 40-100 kHz Switching IXGR72N60C3* *Obsolete Part Number VCES IC110 VCE(sat) tfi(typ) = 600V = 35A £ 2.7V = 55ns ISOPLUS 247TM Symbol Test Conditions Maximum Ratings VCES VCGR VGES VGEM IC25 IC110 ICM IA EAS SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD VISOL FC Weight TJ = 25C to 150C 600 TJ = 25C to 150C, RGE = 1M 600 Continuous 20 Transient 30 e TC = 25C TC = 110C t TC = 25C, 1ms TC = 25C le TC =25C VGE = 15V, TVJ = 125C, RG = 2 Clamped Inductive Load o TC = 25C 80 35 400 50 500 ICM = 150 VCE  VCES 200 -55 ... +150 150 -55 ... +150 s Maximum Lead Temperature for Soldering 300 Plastic Body for 10s 260 50/60 Hz, 1 Minute 2500 Ob Mounting Force 20..

Published: Feb 10, 2025 |