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IXGT32N90B2D1 - IGBT

Download the IXGT32N90B2D1 datasheet PDF. This datasheet also covers the IXGH32N90B2D1 variant, as both devices belong to the same igbt family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • High frequency IGBT.
  • High current handling capability.
  • MOS Gate turn-on - drive simplicity.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXGH32N90B2D1-IXYS.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IXGT32N60BD1 HiPerFAST IGBT IXYS Corporation
IXGT32N60C IGBT IXYS Corporation
IXGT30N120B3D1 GenX3 1200V IGBTs IXYS Corporation
IXGT30N60B HiPerFASTTM IGBT IXYS Corporation
IXGT30N60B2 HiPerFAST IGBT IXYS Corporation

Other Datasheets by IXYS (now Littelfuse)

Part Number Description
IXGT32N90B2 High Speed IGBTs
IXGT32N120A3 Ultra-Low Vsat PT IGBT
IXGT32N170 High Voltage IGBT
IXGT32N170A High Voltage IGBT
IXGT30N60B2D1 IGBT

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Advance Technical Information HiPerFASTTM IGBT with Fast Diode B2-Class High Speed IGBTs with Ultrafast Diode IXGH 32N90B2D1 IXGT 32N90B2D1 V I CES VC25 t CE(sat) fi typ = 900 V = 64 A = 2.7 V = 150 ns Symbol Test Conditions VCES VCGR VGES VGEM TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient IC25 IC110 ICM SSOA (RBSOA) TC = 25°C TC = 110°C TC = 25°C, 1 ms VGE= 15 V, TVJ = 125°C, RG = 10 Ω Clamped inductive load: VCL < 600V PC TC = 25°C TJ TJM Tstg Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md Weight Mounting torque (TO-247) Maximum Ratings 900 V 900 V ±20 V ±30 V 64 A 32 A 200 A ICM = 64 A 300 -55 ... +150 150 -55 ... +150 300 W °C °C °C °C TO-247 TO-268 1.13/10 Nm/lb.in.