IXGT35N120B - IGBT

This page provides the datasheet information for the IXGT35N120B, a member of the IXGH35N120B IGBT family.

Product Overview

IXYS

Part number	IXGT35N120B
Manufacturer	IXYS
File Size	52.45 KB
Description	IGBT
Datasheet	IXGT35N120B Datasheet
Additional preview pages of the IXGT35N120B datasheet.

International standard packages JEDEC TO-268 and JEDEC TO-247 AD.
Low switching losses, low V (sat).
MOS Gate turn-on - drive simplicity Symbol BVCES VGE(th) I CES IGES VCE(sat) Test Conditions IC = 1 mA, VGE = 0 V IC = 750 mA, VCE = VGE V =V CE CES VGE = 0 V VCE = 0 V, VGE = ±20 V IC = IC90, VGE = 15 V Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. T= J 25°C TJ = 125°C TJ = 125°C 1200 2.5 V 5V 250 mA 5 mA ±100 nA 3.3 V 2.7 V.

Other Datasheets by IXYS

Published: Oct 27, 2015 |