IXGT40N120A2 Description
+150 300 W °C °C °C °C 260 °C 1.3/10 Nm/lb.in. 1200 3.0 V 5.0 V TJ = 125°C 50 μA 1mA ± 100 nA 2.0 V TO-247 (IXFH) G CE (TAB) TO-268 (IXGT) G = Gate E = Emitter G E C = Collector TAb = Collector C (TAB).
IXGT40N120A2 Key Features
- International standard packages
- Low VCE(sat)
- for minimum on-state conduction
- MOS Gate turn-on
- drive simplicity