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IXGT40N60B2D1 - IGBT

Download the IXGT40N60B2D1 datasheet PDF. This datasheet also covers the IXGH40N60B2D1 variant, as both devices belong to the same igbt family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • z Medium frequency IGBT z Square RBSOA z High current handling capability z MOS Gate turn-on - drive simplicity.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXGH40N60B2D1-IXYS.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HiPerFASTTM IGBT Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching Preliminary Data Sheet IXGH 40N60B2D1 IXGT 40N60B2D1 V CES IC25 VCE(sat) t fi typ = 600 V = 75 A < 1.7 V = 82 ns Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ V GES VGEM Continuous Transient IC25 TC = 25°C (limited by leads) IC110 TC = 110°C ICM TC = 25°C, 1 ms SSOA (RBSOA) PC V= GE 15 V, T VJ = 125°C, R G = 10 Ω Clamped inductive load @ ≤ 600 V TC = 25°C TJ T JM Tstg Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md Mounting torque (M3) Weight TO-247 AD TO-268 SMD Maximum Ratings 600 V 600 V ±20 V ±30 V 75 A 40 A 200 A I = 80 CM A 300 -55 ... +150 150 -55 ... +150 300 W °C °C °C °C 1.