IXGX32N170AH1
IXGX32N170AH1 is High-Voltage IGBT manufactured by IXYS.
High Voltage IGBT with Diode
IXGX 32N170AH1
VCES IC25 V
CE(sat) tfi(typ)
= 1700 V = 32 A = 5.0 V = 50 ns
Symbol
Test Conditions
Maximum Ratings
VCES VCGR
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ
E VGES
VGEM
Continuous Transient
±20
±30
IC25
TC = 25°C
T IC90
TC = 90°C
IF90
TC = 25°C, 1 ms
E SSOA
(RBSOA)
VGE = 15 V, TVJ = 125°C, RG = 5Ω Clamped inductive load
ICM = 70
@ 0.8 VCES tSC
TJ = 125°C, VCE = 1200 V; VGE = 15 V, RG = 10Ω
μs
L PC
TC =...
