IXGX32N170H1 - High Voltage IGBT

Features

z High current handling capability z MOS Gate turn-on - drive simplicity z Rugged NPT structure z Molding epoxies meet UL 94 V-0 flammability classification.

IXYS

Datasheet Details

Part number	IXGX32N170H1
Manufacturer	IXYS
File Size	519.33 KB
Description	High Voltage IGBT
Datasheet	IXGX32N170H1 Datasheet
Additional preview pages of the IXGX32N170H1 datasheet.

📁 Similar Datasheet

IXGX35N120C - HiPerFAST IGBT (IXYS Corporation)
IXGX35N120CD1 - HiPerFAST IGBT (IXYS Corporation)
IXGX120N60B - IGBT (IXYS Corporation)
IXGX28N140B3H1 - 1400V IGBT (IXYS Corporation)
IXGX50N60A2D1 - IGBT (IXYS Corporation)
IXGX50N60AU1 - HiPerFAST IGBT (IXYS Corporation)
IXGX50N60AU1S - HiPerFAST IGBT (IXYS Corporation)
IXGX50N60C2D1 - High Speed IGBT (IXYS Corporation)
IXGX50N90B2D1 - HiPerFAST IGBT (IXYS Corporation)
IXGX60N60B2D1 - HiPerFAST IGBT (IXYS Corporation)

Other Datasheets by IXYS

IXGX32N170AH1 - High-Voltage IGBT
IXGX320N60A3 - 600V IGBT
IXGX320N60B3 - Medium-Speed Low-Vsat PT IGBT
IXGX35N120B - IGBT
IXGX35N120BD1 - IGBT
IXGX120N120A3 - Ultra-Low Vsat PT IGBT
IXGX120N120B3 - High Speed Low Vsat PT IGBT
IXGX120N60A3 - Ultra-Low Vsat PT IGBT

Full PDF Text Transcription

Click to expand full text

High Voltage IGBT with Diode Advance Technical Information IXGX 32N170H1 VCES IC25 VCE(sat) tfi(typ) = 1700 V = 75 A = 3.3 V = 290 ns Symbol Test Conditions Maximum Ratings VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) tSC TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient 1700 1700 ±20 ±30 TC = 25°C TC = 90°C TC = 25°C, 1 ms 75 32 200 VGE = 15 V, TVJ = 125°C, RG = 5Ω Clamped inductive load ICM = 90 @ 0.8 VCES TJ = 125°C, VCE = 1200 V; VGE = 15 V, RG = 10Ω 10 V V V V A A A A µs PC TC = 25°C TJ TJM Tstg 350 -55 ... +150 150 -55 ... +150 W °C °C °C FC Mounting force with chip 22...130/5...30 N/lb Maximum lead temperature for soldering 1.6 mm (0.062 in.

Published: Oct 29, 2015 |