Datasheet Details
| Part number | IXGX32N170H1 |
|---|---|
| Manufacturer | IXYS (now Littelfuse) |
| File Size | 519.33 KB |
| Description | High Voltage IGBT |
| Datasheet |
 IXGX32N170H1 Datasheet
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| Part number | IXGX32N170H1 |
|---|---|
| Manufacturer | IXYS (now Littelfuse) |
| File Size | 519.33 KB |
| Description | High Voltage IGBT |
| Datasheet |
IXGX32N170H1 Datasheet
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High Voltage IGBT with Diode Advance Technical Information IXGX 32N170H1 VCES IC25 VCE(sat) tfi(typ) = 1700 V = 75 A = 3.3 V = 290 ns Symbol Test Conditions Maximum Ratings VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) tSC TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient 1700 1700 ±20 ±30 TC = 25°C TC = 90°C TC = 25°C, 1 ms 75 32 200 VGE = 15 V, TVJ = 125°C, RG = 5Ω Clamped inductive load ICM = 90 @ 0.8 VCES TJ = 125°C, VCE = 1200 V; VGE = 15 V, RG = 10Ω 10 V V V V A A A A µs PC TC = 25°C TJ TJM Tstg 350 -55 ...
+150 150 -55 ...
+150 W °C °C °C FC Mounting force with chip 22...130/5...30 N/lb Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Weight 300 6 °C g Symbol BVCES VGE(th) ICES IGES VCE(sat) Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min.
| Part Number | Description |
|---|---|
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