Overview: Advance Technical Data HiPerFASTTM IGBT with Diode IXGK 50N60B2D1 IXGX 50N60B2D1 B2-Class High Speed IGBTs V CES
IC25 VCE(sat) t
fi(typ) = 600 V = 75 A = 2.0 V = 65 ns Symbol Test Conditions VCES V
CGR
VGES VGEM TJ = 25°C to 150°C T J = 25°C to 150°C; R GE = 1 MΩ Continuous Transient IC25 TC = 25°C (limited by leads) IC110 TC = 110°C IF110 TC = 110°C (50N60B2D1 Diode) ICM TC = 25°C, 1 ms SSOA (RBSOA)
P C
TJ TJM Tstg Md Weight VGE = 15 V, TVJ = 125°C, RG = 10 Ω Clamped inductive load @ VCE ≤ 600 V T C = 25°C Mounting torque, TO-264
TO-264 PLUS247 Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum Ratings
600 V 600 V
±20 V ±30 V 75 A 50 A 38 A 200 A ICM = 80 A 400 W -55 ... +150 150
-55 ... +150 °C °C °C 1.13/10 Nm/lb.in.
10 g 6g
300 °C Symbol Test Conditions V GE(th)
I CES
IGES V
CE(sat) I
C = 250 µA, V CE = V GE V =V CE CES
VGE = 0 V VCE = 0 V, VGE = ±20 V I = 40 A, V = 15 V
C GE
Note 1 Characteristic Values (TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
3.0 5.0 V T= J 25°C TJ = 125°C 600 µA 5 mA
±100 nA TJ = 125°C 1.6 2.0 1.
