Click to expand full text
Advanced Technical Information
IXKC 15N60C5
CoolMOS™ 1) Power MOSFET
Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge
D
G S
ID25 = 15 A
VDSS
= 600 V
RDS(on) max = 0.165 Ω
ISOPLUS220TM
G D S
E72873
q
isolated back
surface
MOSFET
Symbol
VDSS VGS
ID25 ID90 EAS EAR dV/dt
Conditions TVJ = 25°C
TC = 25°C TC = 90°C
single pulse repetitive
ID = 7.9 A; TC = 25°C
MOSFET dV/dt ruggedness VDS = 0...480 V
Maximum Ratings 600 V ± 20 V
15 A 11 A 522 mJ 0.79 mJ 50 V/ns
Symbol
RDSon VGS(th) IDSS
IGSS Ciss Coss Qg Qgs Qgd td(on) tr td(off) tf RthJC
Conditions
Characteristic Values (TVJ = 25°C, unless otherwise specified)
min. typ. max.
VGS = 10 V; ID = 12 A VDS = VGS; ID = 0.
IXKC15N60C5 Datasheet
