Datasheet Summary
Advanced Technical Information
IXKC 15N60C5
CoolMOS™ 1) Power MOSFET
Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge
ID25 = 15 A
VDSS
= 600 V
RDS(on) max = 0.165 Ω
ISOPLUS220TM
E72873 q isolated back surface
MOSFET
Symbol
VDSS VGS
ID25 ID90 EAS EAR dV/dt
Conditions TVJ = 25°C
TC = 25°C TC = 90°C single pulse repetitive
ID = 7.9 A; TC = 25°C
MOSFET dV/dt ruggedness VDS = 0...480 V
Maximum Ratings 600 V ± 20 V
15 A 11 A 522 mJ 0.79 mJ 50 V/ns
Symbol
RDSon VGS(th) IDSS
IGSS Ciss Coss Qg Qgs Qgd td(on) tr td(off) tf RthJC
Conditions
Characteristic Values (TVJ = 25°C,...
