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IXKC15N60C5 Datasheet

The IXKC15N60C5 is a Power MOSFET. Download the datasheet PDF and view key features and specifications below.

Part NumberIXKC15N60C5
ManufacturerIXYS
Overview Advanced Technical Information IXKC 15N60C5 CoolMOS™ 1) Power MOSFET Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low .
* Silicon chip on Direct-Copper-Bond substrate - high power dissipation - isolated mounting surface - 2500 V electrical isolation - low drain to tab capacitance (< 30 pF)
* Fast CoolMOS™ 1) power MOSFET 4th generation - high blocking capability - lowest resistance - avalanche rated for unclamped ind.
Part NumberIXKC15N60C5
DescriptionN-Channel MOSFET
ManufacturerInchange Semiconductor
Overview isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 165mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable .
*Static drain-source on-resistance: RDS(on) ≤ 165mΩ@VGS=10V
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation
*APPLICATION
*DC/DC Converters
*High Current Switching Applications
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VD.