IXSH24N60BD1
IXSH24N60BD1 is High Speed IGBT manufactured by IXYS.
- Part of the IXSH24N60B comparator family.
- Part of the IXSH24N60B comparator family.
High Speed IGBT
Short Circuit SOA Capability
IXSH IXST IXSH IXST
24N60B 24N60B 24N60BD1 24N60BD1
VCES IC25 VCE(sat) tfi typ
= 600 V = 48 A = 2.5 V = 170 ns
(D1)
Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) t SC (SCSOA) PC TJ TJM Tstg Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE= 15 V, TJ = 125°C, RG = 33 Ω Clamped inductive load, VCC= 0.8 VCES VGE = 15 V, VCE = 360 V, TJ = 125°C RG = 33 Ω, non repetitive TC = 25°C
Maximum Ratings 600 600 ± 20 ± 30 48 24 96 ICM = 48 @ 0.8 VCES 10 150 -55 ... +150 150 -55 ... +150 V V V V A A A A µs W °C °C °C
TO-247 AD (IXSH)
(TAB) G C E
TO-268 (D3) ( IXST)
G E G = Gate E = Emitter (TAB)
TAB = Collector
Features z z
Mounting torque
1.13/10 Nm/lb.in. 6 300 g °C z
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s z z z
Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 600 3.5 24N60B 24N60BD1 24N60B 24N60BD1 6.5 25 200 1 2 ±100 2.5 V V µA µA m A m A n A V
International standard packages Guaranteed Short Circuit SOA capability Low VCE(sat)
- for low on-state conduction losses High current handling capability MOS Gate turn-on
- drive simplicity Fast Fall Time for switching speeds up to 50 k Hz
Applications z z z
BVCES VGE(th) ICES
IC IC
= 250 µA, VGE = 0 V = 1.5 m A, VCE = VGE TJ = 25°C TJ = 125°C
VCE =...
