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IXSH30N60A Datasheet PDF

IXYS IXSH30N60A

the IXSH 30N60U1 and IXSH 30N60AU1 data sheets.
Part No. IXSH30N60A
Datasheet IXSH30N60A Download
Manufacturer
IXYS
Description Low VCE(sat) IGBT
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IXSH30N60A datasheet page 1 preview

MAXIMUM RATINGS

600 600 ±20 ±30 50 30 100 ICM = 60 @ 0.8 VCES 10 200 -55 ... +150 150 -55 ... +150 V V V V A A A A µs TO-247 AD (IXSH) VCGR V GES V GEM I C25 I C90 I CM SSOA (RBSOA) tSC (SCSOA) PC TJ TJM Tstg Md Weight G C E TO-204 AE (IXSM) C W °C °C °C G = Gate, E = Emitter, C = Collector, TAB = Collector

FEATURES

l l Mounting torque 1.13/10 Nm/lb.in. TO-204 = 18 g, TO-247 = 6 g 300 °C Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s l l l Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 600 5 TJ = 25°C TJ = 125°C 8 100 1 ±100 30N60 30N60A 2.5 3.0 V V µA mA nA V V l International standard packages Guaranteed Short Circuit SOA capability Low VCE(sat) - for low on-state conduction losses High current handling capability MOS Gate turn-on - drive simplicity Fast Fall Time for switching speeds up to 20 kHz BVCES VGE(th) ICES IGES VCE(sat) IC IC = 250 µA, VGE = 0 V = 2.5 mA, VCE = VGE

APPLICATIONS

l l l VCE = 0.
IXSH30N60A page 2 preview