Overview: High Voltage Power MOSFETs
N-Channel Enhancement Mode Fast Intrinsic Diode IXTA02N250 IXTH02N250 IXTV02N250S VDSS = ID25 = ≤RDS(on) 2500V 200mA 450Ω TO-263 (IXTA) Symbol
VDSS VDGR
VGSS VGSM
ID25 IDM
PD
TJ TJM Tstg
TL TSOLD Md FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C
1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Torque (TO-247) Mounting Force (PLUS220 & TO-263) TO-263 PLUS220 TO-247 Maximum Ratings 2500 2500 V V ±20 V ±30 V 200 mA 600 mA 83 W - 55 ... +150 150
- 55 ... +150 °C °C °C 300 260
1.13 / 10 11..65 / 25..14.6 °C °C
Nm/lb.in
N/lb. 2.5 g 4.0 g 6.0 g G S D (Tab)
TO-247 (IXTH) G DS D (Tab) PLUS220SMD (IXTV_S) G S D (Tab) G = Gate S = Source D = Drain Tab = Drain Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = 250μA VGS(th) VDS = VGS, ID = 250μA IGSS VGS = ±20V, VDS = 0V IDSS VDS = 0.8 • VDSS TJ = 125°C RDS(on) VGS = 10V, ID = 50mA, Note 1 Characteristic Values Min. Typ. Max. 2500 V 2.5 4.
