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IXTA02N250 - High Voltage Power MOSFET

Key Features

  • z Fast Intrinsic Diode z Low Package Inductance Advantages z Easy to Mount z Space Savings.

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High Voltage Power MOSFETs N-Channel Enhancement Mode Fast Intrinsic Diode IXTA02N250 IXTH02N250 IXTV02N250S VDSS = ID25 = ≤RDS(on) 2500V 200mA 450Ω TO-263 (IXTA) Symbol VDSS VDGR VGSS VGSM ID25 IDM PD TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Torque (TO-247) Mounting Force (PLUS220 & TO-263) TO-263 PLUS220 TO-247 Maximum Ratings 2500 2500 V V ±20 V ±30 V 200 mA 600 mA 83 W - 55 ... +150 150 - 55 ... +150 °C °C °C 300 260 1.13 / 10 11..65 / 25..14.6 °C °C Nm/lb.in N/lb. 2.5 g 4.0 g 6.