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High Voltage Power MOSFETs
N-Channel Enhancement Mode Fast Intrinsic Diode
IXTA02N250 IXTH02N250 IXTV02N250S
VDSS = ID25 = ≤RDS(on)
2500V 200mA 450Ω
TO-263 (IXTA)
Symbol
VDSS VDGR
VGSS VGSM
ID25 IDM
PD
TJ TJM Tstg
TL TSOLD Md FC Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C
1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Torque (TO-247) Mounting Force (PLUS220 & TO-263) TO-263 PLUS220 TO-247
Maximum Ratings 2500 2500
V V
±20 V ±30 V
200 mA 600 mA
83 W
- 55 ... +150 150
- 55 ... +150
°C °C °C
300 260
1.13 / 10 11..65 / 25..14.6
°C °C
Nm/lb.in
N/lb.
2.5 g 4.0 g 6.
IXTA02N250 Datasheet
