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IXTA02N250HV - High Voltage Power MOSFET

Key Features

  • z High Voltage package z High Blocking Voltage z Fast Intrinsic Diode z Low Package Inductance Advantages z Easy to Mount z Space Savings Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = 250μA VGS(th) VDS = VGS, ID = 250μA IGSS VGS = ±20V, VDS = 0V IDSS VDS = 0.8.
  • VDSS, VGS = 0V TJ = 125°C RDS(on) VGS = 10V, ID = 50mA, Note 1 Characteristic Values Min. Typ. Max. 2500 V 2.5 4.5 V ±100 nA 5 μA 500 μA 450 Ω.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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High Voltage Power MOSFET Advance Technical Information IXTA02N250HV VDSS = ID25 = ≤ RDS(on) 2500V 200mA 450Ω N-Channel Enhancement Mode Fast Intrinsic Diode TO-263AB Symbol VDSS VDGR VGSS VGSM ID25 IDM PD TJ TJM Tstg TL TSOLD FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Maximum Ratings 2500 V 2500 V ±20 V ±30 V 200 mA 600 mA 83 W - 55 ... +150 °C 150 °C - 55 ... +150 °C 300 °C 260 °C Mounting Force 11..65 / 25..14.6 2.5 N/lb.