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IXTA10P50P - Power MOSFET

Key Features

  • International Standard Packages.
  • Avalanche Rated.
  • Rugged PolarPTM Process.
  • Low Package Inductance.
  • Fast Intrinsic Diode Advantages.
  • Easy to Mount.
  • Space Savings.
  • High Power Density.

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Other Datasheets by IXYS (now Littelfuse)

Part Number Description
IXTA100N04T2 Power MOSFET
IXTA100N15X4 Power MOSFET
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IXTA10N60P Power MOSFET
IXTA110N055T2 Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PolarPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTA10P50P IXTP10P50P IXTQ10P50P IXTH10P50P TO-263 AA (IXTA) TO-220AB (IXTP) VDSS = ID25 =  RDS(on) - 500V - 10A 1 TO-3P (IXTQ) G S D (Tab) G DS D (Tab) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings - 500 V - 500 V 20 V 30 V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C - 10 A - 30 A - 10 A 1.5 J IS  IDM, VDD  VDSS, TJ  150C TC = 25C 10 300 -55 ... +150 150 -55 ... +150 V/ns W C C C 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s 300 C 260 C Mounting Torque (TO-3P,TO-220 & TO-247) 1.13/10 Nm/lb.